SSM4435M

更新时间： 2024-11-29 06:14:15

品牌	Logo	应用领域
SSC		晶体晶体管
页数	文件大小	规格书
6页	120K
描述
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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中文翻译

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技术参数
数据手册

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SSM4435M 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.69	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

SSM4435M 数据手册

SSM4435M

P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Simple drive requirement

Low on-resistance

Fast switching

BV_DSS

R _DS(ON)

I_D

-30V

20mW

-8A

SO-8

Description

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is widely preferred for commercial and industrial

surface mount applications and is well suited for low voltage applications

such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

- 30

± 20

-8

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

I_D@ T_A=25°C

I_D@ T_A=70°C

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,2

-6

-50

P_D@ T_A=25°C

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-amb

Thermal Resistance Junction-ambient

Max.

°C/W

Rev.2.02 4/18/2004

www.SiliconStandard.com

1 of 6

12 3 4 5 6

中文翻译

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