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SSM4435M PDF预览

SSM4435M

更新时间: 2024-11-05 06:14:15
品牌 Logo 应用领域
SSC 晶体晶体管
页数 文件大小 规格书
6页 120K
描述
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM4435M 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.69Is Samacsys:N
湿度敏感等级:1Base Number Matches:1

SSM4435M 数据手册

 浏览型号SSM4435M的Datasheet PDF文件第2页浏览型号SSM4435M的Datasheet PDF文件第3页浏览型号SSM4435M的Datasheet PDF文件第4页浏览型号SSM4435M的Datasheet PDF文件第5页浏览型号SSM4435M的Datasheet PDF文件第6页 
SSM4435M  
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET  
Simple drive requirement  
Low on-resistance  
Fast switching  
BVDSS  
R DS(ON)  
ID  
-30V  
20mW  
-8A  
D
D
D
D
G
S
S
SO-8  
S
Description  
D
S
Power MOSFETs from Silicon Standard provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The SO-8 package is widely preferred for commercial and industrial  
surface mount applications and is well suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
- 30  
± 20  
-8  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
ID @ TA=25°C  
ID @ TA=70°C  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1,2  
A
-6  
-50  
A
A
PD @ TA=25°C  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/°C  
°C  
°C  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-amb  
Thermal Resistance Junction-ambient  
Max.  
°C/W  
Rev.2.02 4/18/2004  
www.SiliconStandard.com  
1 of 6  

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