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SSM4423GM PDF预览

SSM4423GM

更新时间: 2024-11-29 06:14:11
品牌 Logo 应用领域
SSC /
页数 文件大小 规格书
5页 211K
描述
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

SSM4423GM 数据手册

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SSM4423GM  
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET  
Simple drive requirement  
Lower gate charge  
BV DSS  
R DS(ON)  
ID  
-30V  
15m  
-11A  
D
D
D
D
Fast switching characteristics  
G
S
S
SO-8  
S
Description  
D
S
Advanced Power MOSFETs from Silicon Standard provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The SSM4423M is in the SO-8 package, which is widely preferred for  
commercial and industrial surface mount applications, and is well suited  
for low voltage applications such as DC/DC converters.  
RoHS compliant.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
± 25  
Gate-Source Voltage  
V
ID @ TA=25°C  
ID @ TA=70°C  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-11  
A
-8.7  
A
-50  
A
PD @ TA=25°C  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/°C  
°C  
°C  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
°C/W  
3/21/2005 Rev.2.01  
www.SiliconStandard.com  
1 of 5  

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