是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-F5 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 0.76 |
Samacsys Description: | VISHAY - SI7850DP-T1-GE3. - N CHANNEL MOSFET, 60V, 10.3A, SOIC, FULL | 雪崩能效等级(Eas): | 11 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 6.2 A |
最大漏源导通电阻: | 0.022 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F5 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.8 W | 最大脉冲漏极电流 (IDM): | 40 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 74 ns |
最大开启时间(吨): | 40 ns |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFH5406TRPBF | INFINEON |
功能相似 |
HEXFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI7852ADP | VISHAY |
获取价格 |
N-Channel 80-V (D-S) MOSFET | |
SI7852ADP-T1-E3 | VISHAY |
获取价格 |
N-Channel 80-V (D-S) MOSFET | |
SI7852ADP-T1-GE3 | VISHAY |
获取价格 |
N-Channel 80-V (D-S) MOSFET | |
SI7852DP | VISHAY |
获取价格 |
N-Channel 80-V (D-S) MOSFET | |
SI7852DP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 7.6 A, 80 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK | |
SI7852DP-T1-GE3 | VISHAY |
获取价格 |
N-Channel 80-V (D-S) MOSFET | |
SI7856ADP-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
SI7856ADP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, | |
SI7856ADP-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM | |
SI7856DP | VISHAY |
获取价格 |
N-Channel 30-V (D-S) MOSFET |