Datasheet > Si7862ADP

Si7862ADP

更新时间： 2023-12-06 20:01:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	291K
描述
N-Channel 16-V (D-S) MOSFET

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中文翻译

获取价格

数据手册

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Si7862ADP 数据手册

Si7862ADP

Vishay Siliconix

N-Channel 16-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free available

TrenchFET^®Power MOSFETS: 2.5 V Rated

Low 3.3 mΩ R_DS(on)

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

RoHS

0.003 at V_GS= 4.5 V

0.0055 at V_GS= 2.5 V

COMPLIANT

Low Gate Resistance

100 % R_gTested

APPLICATIONS

PowerPAK^®SO-8

•

Synchronous Rectification

•

Low Output Voltage Synchronous Rectification

6.15 mm

5.15 mm

Bottom View

Ordering Information:

Si7862ADP-T1-E3 (Lead (Pb)-free)

Si7862ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source Current (Diode Conduction)^a

4.5

5.4

3.4

1.6

1.9

1.2

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{b, c}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 10 s

Steady State

Maximum Junction-to-Ambient^a

R_thJA

°C/W

R_thJC

Maximum Junction-to-Case (Drain)

1.0

1.5

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 73165

S-80438-Rev. C, 03-Mar-08

www.vishay.com

12 3 4 5 6 7...12

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与Si7862ADP相关器件

型号	品牌	获取价格	描述	数据表
SI7862ADP-T1-E3	VISHAY	获取价格	TRANSISTOR 18 A, 16 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS,
SI7862ADP-T1-GE3	VISHAY	获取价格	TRANSISTOR 18 A, 16 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP
SI7862DP	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SI7862DP-E3	VISHAY	获取价格	TRANSISTOR 18 A, 16 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener
SI7862DP-T1	VISHAY	获取价格	TRANSISTOR 18 A, 16 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener
SI7862DP-T1-E3	VISHAY	获取价格	TRANSISTOR 18 A, 16 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener
SI7864ADP-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7864ADP-T1-GE3	VISHAY	获取价格	TRANSISTOR 18 A, 20 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP
SI7864DP	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SI7864DP-E3	VISHAY	获取价格	TRANSISTOR 18 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener

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