是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 18 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 5.4 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI7864ADP-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP |
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SI7864DP | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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SI7864DP-E3 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener |
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SI7864DP-T1 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener |
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SI7864DP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener |
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SI7866ADP | VISHAY |
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N-Channel 20-V (D-S) MOSFET |
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SI7866ADP_17 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET |
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SI7866ADP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 35 A, 20 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, |
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SI7866ADP-T1-GE3 | VISHAY |
获取价格 |
MOSFET N-CH 20V 40A PPAK SO-8 |
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SI7866DP | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET |
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