是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-XDSO-C5 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.38 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 18 A |
最大漏极电流 (ID): | 18 A | 最大漏源导通电阻: | 0.0035 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XDSO-C5 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 5.4 W |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI7864DP-T1 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener | |
SI7864DP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener | |
SI7866ADP | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET | |
SI7866ADP_17 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET | |
SI7866ADP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 35 A, 20 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, | |
SI7866ADP-T1-GE3 | VISHAY |
获取价格 |
MOSFET N-CH 20V 40A PPAK SO-8 | |
SI7866DP | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET | |
SI7866DP-E3 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener | |
SI7866DP-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI7868ADP | VISHAY |
获取价格 |
Si7868ADP vs. Si7868DP Specification Comparison |