是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-XDSO-C5 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.7 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 16 V |
最大漏极电流 (Abs) (ID): | 18 A | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.0033 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XDSO-C5 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 5.4 W | 最大脉冲漏极电流 (IDM): | 60 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI7864ADP-T1-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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SI7864ADP-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP |
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SI7864DP | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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SI7864DP-E3 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener |
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SI7864DP-T1 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener |
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SI7864DP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 18 A, 20 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gener |
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SI7866ADP | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET |
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SI7866ADP_17 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET |
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SI7866ADP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 35 A, 20 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, |
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SI7866ADP-T1-GE3 | VISHAY |
获取价格 |
MOSFET N-CH 20V 40A PPAK SO-8 |
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