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SI7860DP-T1 PDF预览

SI7860DP-T1

更新时间： 2024-11-06 21:16:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
11页 463K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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SI7860DP-T1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.85
配置：Single最大漏极电流 (Abs) (ID)：11 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e0
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：5 W子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

SI7860DP-T1 数据手册

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Si7860DP  
Vishay Siliconix  
N-Channel Reduced Q , Fast Switching MOSFET  
g
FEATURES  
PRODUCT SUMMARY  
•
Halogen-free According to IEC 61249-2-21  
Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
18  
TrenchFET® Power MOSFET  
0.008 at VGS = 10 V  
0.011 at VGS = 4.5 V  
•
•
•
•
30  
PWM Optimized for High Efficiency  
New Low Thermal Resistance  
15  
PowerPAK® Package with Low 1.07 mm Profile  
• 100 % Rg Tested  
PowerPAK SO-8  
APPLICATIONS  
•
Buck Converter  
- High Side or Low Side  
S
6.15 mm  
5.15 mm  
1
S
2
•
Synchronous Rectifier  
- Secondary Rectifier  
S
3
G
4
D
D
8
D
7
D
6
D
5
G
Bottom View  
Ordering Information: Si7860DP-T1  
Si7860DP-T1-E3 (Lead (Pb)-free)  
Si7860DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
20  
V
VGS  
TA = 25 °C  
TA = 70 °C  
18  
15  
11  
8
Continuous Drain Current (TJ = 150 °C)a  
ID  
IDM  
IS  
Pulsed Drain Current  
50  
A
Continuous Source Current (Diode Continuous)a  
Avalanche Current  
4.1  
1.5  
IAS  
EAS  
30  
45  
L = 0.1 mH  
Single Pulse Avalanche Energy  
mJ  
W
TA = 25 °C  
TA = 70 °C  
5
1.8  
1.1  
Maximum Power Dissipationa  
PD  
3.2  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b,c  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
20  
Maximum  
Unit  
t ≤ 10 s  
Steady State  
Steady State  
25  
70  
Maximum Junction-to-Ambient (MOSFET)a  
Maximum Junction-to-Case (Drain)  
RthJA  
56  
°C/W  
RthJC  
1.8  
2.3  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 71854  
S09-0222-Rev. E, 09-Feb-09  
www.vishay.com  
1
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