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SI7852DP-T1-E3 PDF预览

SI7852DP-T1-E3

更新时间： 2024-11-05 14:44:43
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
12页 368K
描述
TRANSISTOR 7.6 A, 80 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power

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SI7852DP-T1-E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOT
包装说明：SMALL OUTLINE, R-XDSO-C5针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.24其他特性：FAST SWITCHING
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：80 V最大漏极电流 (Abs) (ID)：7.6 A
最大漏极电流 (ID)：7.6 A最大漏源导通电阻：0.0165 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XDSO-C5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：5.2 W
最大脉冲漏极电流 (IDM)：50 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI7852DP-T1-E3 数据手册

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Si7852DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 80 V (D-S) MOSFET  
FEATURES  
• TrenchFET® power MOSFETs  
• New low thermal resistance PowerPAK®  
package with low 1.07 mm profile  
PowerPAK® SO-8 Single  
D
D
7
8
D
6
D
5
• PWM optimized for fast switching  
• 100 % Rg tested  
Available  
• Material categorization: for definitions of  
1
S
compliance please see www.vishay.com/doc?99912  
2
3
S
S
APPLICATIONS  
4
G
1
• Primary side switch for DC/DC applications  
Top View  
Bottom View  
D
PRODUCT SUMMARY  
VDS (V)  
80  
R
DS(on) max. () at VGS = 10 V  
DS(on) max. () at VGS = 6 V  
0.0165  
0.0220  
34  
G
R
Qg typ. (nC)  
D (A)  
Configuration  
I
12.5  
S
Single  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
PowerPAK SO-8  
Si7852DP-T1-E3  
Si7852DP-T1-GE3  
Lead (Pb)-free  
Lead (Pb)-free and halogen-free  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
10 s  
STEADY STATE  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
80  
80  
20  
V
VGS  
20  
TA = 25 °C  
TA = 70 °C  
12.5  
10  
7.6  
6.1  
50  
Continuous drain current (TJ = 150 °C) a  
ID  
Pulsed drain current  
IDM  
IAS  
IS  
50  
A
Avalanche current  
Continuous source current (diode conduction) a  
L = 0.1 mH  
40  
40  
4.7  
5.2  
3.3  
1.7  
1.9  
1.2  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation a  
PD  
W
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) b, c  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
TYPICAL  
MAXIMUM  
UNIT  
t 10 s  
19  
52  
24  
65  
Maximum junction-to-ambient a  
Steady state  
Steady state  
°C/W  
Maximum junction-to-case (drain)  
Notes  
a. Surface mounted on 1" x 1" FR4 board  
RthJC  
1.5  
1.8  
b. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection  
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
S09-0268-Rev. E, 16-Feb-09  
Document Number: 71627  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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