是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.91 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 15 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 5.4 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI7856ADP-T1-E3 | VISHAY |
获取价格 |
TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, | |
SI7856ADP-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM | |
SI7856DP | VISHAY |
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N-Channel 30-V (D-S) MOSFET | |
SI7856DP-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI7856DP-T1 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
Si7858ADP | VISHAY |
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N-Channel 12-V (D-S) MOSFET | |
SI7858ADP-T1-E3 | VISHAY |
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TRANSISTOR 20 A, 12 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, | |
SI7858ADP-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 20 A, 12 V, 0.0026 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM | |
SI7858BDP | VISHAY |
获取价格 |
N-Channel 12 V (D-S) MOSFET | |
SI7858BDP-T1-GE3 | VISHAY |
获取价格 |
N-Channel 12 V (D-S) MOSFET |