Datasheet > SI7858DP-T1

SI7858DP-T1

更新时间： 2024-09-16 08:38:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	46K
描述
TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power

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SI7858DP-T1 数据手册

Si7858DP

Vishay Siliconix

N-Channel 12-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr

Package with Low 1.07-mm Profile

D 100% R_gTested

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

APPLICATIONS

0.003 @ V = 4.5 V

D Low Output Voltage, High Current

0.004 @ V = 2.5 V

Synchronous Rectifiers

PowerPAK SO-8

6.15 mm

5.15 mm

N-Channel MOSFET

Bottom View

Ordering Information: Si7858DP-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

= 25_C

= 70_C

Continuous Drain Current (T = 150__C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

4.5

5.4

3.4

1.6

1.9

1.2

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

1.0

1.5

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71832

S-31727—Rev. B, 18-Aug-03

www.vishay.com

12 3 4 5

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