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SI7860ADP-T1-GE3 PDF预览

SI7860ADP-T1-GE3

更新时间： 2024-01-10 16:44:52
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 143K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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中文翻译

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SI7860ADP-T1-GE3 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code：unknown风险等级：5.84
雪崩能效等级（Eas）：60 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：11 A最大漏源导通电阻：0.0095 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：50 A表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SI7860ADP-T1-GE3 数据手册

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Si7860ADP  
Vishay Siliconix  
N-Channel Reduced Q , Fast Switching MOSFET  
g
FEATURES  
PRODUCT SUMMARY  
•
Halogen-free According to IEC 61249-2-21  
Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
16  
TrenchFET® Power MOSFET  
PWM Optimized for High Efficiency  
0.0095 at VGS = 10 V  
0.0125 at VGS = 4.5 V  
•
•
•
30  
16  
New Low Thermal Resistance PowerPAK®  
Package with Low 1.07 mm Profile  
•
100 % Rg Tested  
PowerPAK SO-8  
APPLICATIONS  
•
Buck Converter  
S
- High Side or Low Side  
6.15 mm  
5.15 mm  
1
S
•
Synchronous Rectifier  
- Secondary Rectifier  
2
S
3
G
D
4
D
8
D
7
D
6
D
G
5
Bottom View  
S
Ordering Information:  
Si7860ADP-T1-E3 (Lead (Pb)-free)  
Si7860ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
20  
V
VGS  
TA = 25 °C  
TA = 70 °C  
16  
13  
11  
8
Continuous Drain Current (TJ = 150 °C)a  
ID  
IDM  
IS  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
Avalanche Current  
50  
A
4.1  
1.5  
IAS  
EAS  
35  
60  
L = 0.1 mH  
TA = 25 °C  
Single Pulse Avalanche Energy  
mJ  
W
4.8  
3.1  
1.8  
1.1  
Maximum Power Dissipationa  
PD  
TA = 70 °C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b, c  
TJ, Tstg  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
21  
Maximum  
Unit  
t ≤ 10 s  
Steady State  
Steady State  
26  
70  
Maximum Junction-to-Ambient (MOSFET)a  
Maximum Junction-to-Case (Drain)  
RthJA  
56  
°C/W  
RthJC  
1.9  
2.5  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 72651  
S09-0272-Rev. D, 16-Feb-09  
www.vishay.com  
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SI7860ADP-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI7860DP-T1-GE3 VISHAY

完全替代

 TRANSISTOR 11 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK,

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