Datasheet > SI7856DP-T1

SI7856DP-T1

更新时间： 2024-09-15 15:51:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	46K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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SI7856DP-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.89
配置：	Single	最大漏极电流 (Abs) (ID)：	14 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	5.4 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SI7856DP-T1 数据手册

Si7856DP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFET

PRODUCT SUMMARY

D Optimized for “Low Side” Synchronous

Rectifier Operation

V_DS(V)

r_DS(on)(W)

I_D(A)

D New Low Thermal Resistance PowerPAKr

Package with Low 1.07-mm Profile

D 100% R_gTested

0.0045 @ V = 10 V

0.0055 @ V = 4.5 V

APPLICATIONS

D DC/DC Converters

D Synchronous Rectifiers

PowerPAK SO-8

6.15 mm

5.15 mm

N-Channel MOSFET

Bottom View

Ordering Information: Si7856DP-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

Continuous Drain Current (T = 150__C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

4.5

5.4

3.4

1.6

1.9

1.2

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

1.0

1.5

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71850

S-31727—Rev. B, 18-Aug-03

www.vishay.com

12 3 4 5

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