SI7858BDP

更新时间： 2024-11-05 09:25:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	515K
描述
N-Channel 12 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI7858BDP 数据手册

New Product

Si7858BDP

Vishay Siliconix

N-Channel 12 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)^a

Q_g(Typ.)

Definition

0.0025 at V_GS= 4.5 V

0.0030 at V_GS= 2.5 V

0.0037 at V_GS= 1.8 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

100 % UIS Tested

Compliant to RoHS Directive 2002/95/EC

56 nC

PowerPAK^®SO-8

APPLICATIONS

•

Low Output Voltage, High Current Synchronous

6.15 mm

5.15 mm

Rectifiers

Bottom View

Ordering Information: Si7858BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

Unit

V_GS

40^a

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

40^a

Continuous Drain Current (T_J= 150 °C)

I_D

33^{b, c}

26^{b, c}

40^a

4.5^{b, c}

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

E_AS

T_C= 70 °C

P_D

Maximum Power Dissipation

5.0^{b, c}

3.2^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

R_thJA

t ≤ 10 s

°C/W

Steady State

R_thJC

2.1

2.6

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

Document Number: 66589

S10-1045-Rev. A, 03-May-10

www.vishay.com

12 3 4 5 6 7...13

中文翻译

下载PDF

与SI7858BDP相关器件

型号	品牌	获取价格	描述	数据表
SI7858BDP-T1-GE3	VISHAY	获取价格	N-Channel 12 V (D-S) MOSFET
SI7858DP	VISHAY	获取价格	N-Channel 12-V (D-S) MOSFET
SI7858DP-E3	VISHAY	获取价格	TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Genera
SI7858DP-T1	VISHAY	获取价格	TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Genera
SI7858DP-T1-E3	VISHAY	获取价格	TRANSISTOR 18 A, 12 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Genera
SI786	VISHAY	获取价格	Dual-Output Power-Supply Controller
SI7860ADP	VISHAY	获取价格	N-Channel Reduced, Fast Switching MOSFET
SI7860ADP-T1-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SI7860DP	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching MOSFET
SI7860DP-E3	VISHAY	获取价格	TRANSISTOR 11 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Genera

与SI7858BDP相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

SI7858BDP

SI7858BDP 数据手册

与SI7858BDP相关器件

与SI7858BDP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SI7858BDP

SI7858BDP 数据手册

与SI7858BDP相关器件

与SI7858BDP相关文章

您还可以找

您在本页遇到什么问题？