Datasheet > IRFH5406TRPBF

IRFH5406TRPBF

更新时间： 2024-11-23 11:55:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	301K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

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IRFH5406TRPBF 数据手册

PD-96299

IRFH5406PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

14.4

Ω

R_{G (typical)}

1.1

Ω

I_D

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

FeaturesandBenefits

Features

Benefits

Low RDSon (< 14.4 mΩ)

Low Thermal Resistance to PCB (< 2.7°C/W)

100% Rg tested

Lower Conduction Losses

Enables better thermal dissipation

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFH5406TRPBF

IRFH5406TR2PBF

PQFN 5mm x 6mm

Tape and Reel

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

V_GS

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

160

3.6

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

W/°C

°C

Power Dissipation

Linear Derating Factor

0.029

-55 to + 150

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through ꢀ are on page 8

www.irf.com

04/12/10

12 3 4 5 6 7 8

中文翻译

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IRFH5406TRPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFH5406TR2PBF	INFINEON	类似代替	HEXFET Power MOSFET
SI7850DP-T1-E3	VISHAY	功能相似	N-Channel 60-V (D-S) Fast Switching MOSFET

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