Datasheet > IRFH7084PBF_15

IRFH7084PBF_15

更新时间： 2024-11-24 01:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	715K
描述
Half-bridge and full-bridge topologies

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数据手册

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IRFH7084PBF_15 数据手册

StrongIRFET™

IRFH7084PbF

HEXFET^®Power MOSFET

Application

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 DC/DC converters

V_DSS

40V

R_{DS(on) typ.}

0.95m

1.25m

265A

 DC/AC Inverters

max

I_{D (Silicon Limited)}

I_{D (Package Limited)}

100A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

PQFN 5X6 mm

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tape and Reel

Quantity

4000

IRFH7084TRPbF

IRFH7084PbF

PQFN 5mm x 6mm

300

240

180

120

= 100A

Limited by package

T = 125°C

T = 25°C

100

125

150

, Gate-to-Source Voltage (V)

, Case Temperature (°C)

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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March 19, 2015

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