Datasheet > IRFH7190PBF_15

IRFH7190PBF_15

更新时间： 2024-11-24 01:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	503K
描述
Optimized for Secondary Side Synchronous Rectification

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中文翻译

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数据手册

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IRFH7190PBF_15 数据手册

FastIRFET™

IRFH7190PbF

HEXFET^®Power MOSFET

V_DSS

100

7.5

R_DS(on)max

(@ V_GS= 10V)

m

Q_{g (typical)}

R_{g (typical)}

1.0



I_D

(@T_{C (Bottom)}= 25°C)

PQFN 5X6 mm

Applications

 Optimized for Secondary Side Synchronous Rectification

 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies

 Hot Swap and Active O-Ring

 BLDC Motor Drive

Features

Low R_DS(ON)(< 7.5m)

Benefits

Lower Conduction Losses

Internal Snubber

Low Thermal Resistance to PCB (<1.2°C/W)

100% Rg Tested

Reduced Vds Spike, Improved EMI

Increased Power Density

Increased Reliability

Low Profile (<1.05 mm)

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

results in



Environmentally Friendlier

Increased Reliability

Standard Pack

Base part number

Package Type

Orderable Part Number

Form

Quantity

4000

IRFH7190PbF

PQFN 5mm x 6 mm

Tape and Reel

IRFH7190TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

245

3.6

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation

104

0.03

Linear Derating Factor

W/°C

°C

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

Notes  through  are on page 9

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January 13, 2015

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