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IRFH7545TRPBF PDF预览

IRFH7545TRPBF

更新时间: 2024-11-05 20:54:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 558K
描述
Power Field-Effect Transistor

IRFH7545TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.68湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

IRFH7545TRPBF 数据手册

 浏览型号IRFH7545TRPBF的Datasheet PDF文件第2页浏览型号IRFH7545TRPBF的Datasheet PDF文件第3页浏览型号IRFH7545TRPBF的Datasheet PDF文件第4页浏览型号IRFH7545TRPBF的Datasheet PDF文件第5页浏览型号IRFH7545TRPBF的Datasheet PDF文件第6页浏览型号IRFH7545TRPBF的Datasheet PDF文件第7页 
StrongIRFET™  
IRFH7545PbF  
HEXFET® Power MOSFET  
Application  
 Brushed Motor drive applications  
 BLDC Motor drive applications  
 Battery powered circuits  
 Half-bridge and full-bridge topologies  
 Synchronous rectifier applications  
 Resonant mode power supplies  
 OR-ing and redundant power switches  
 DC/DC and AC/DC converters  
 DC/AC Inverters  
VDSS  
60V  
RDS(on) typ.  
4.3m  
5.2m  
85A  
max  
ID  
Benefits  
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
 Fully Characterized Capacitance and Avalanche SOA  
 Enhanced body diode dV/dt and dI/dt Capability  
 Lead-Free, RoHS Compliant  
PQFN 5 x 6 mm  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
IRFH7545PbF  
PQFN 5mm x 6mm  
Tape and Reel  
4000  
IRFH7545TRPbF  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
I
= 51A  
D
T
T
= 125°C  
= 25°C  
J
J
0
2
4
6
8
10 12 14 16 18 20  
25  
50  
75  
100  
125  
150  
T
, Case Temperature (°C)  
V
Gate -to -Source Voltage (V)  
C
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
November 7, 2014  

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