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IRFH7932TRPBF PDF预览

IRFH7932TRPBF

更新时间: 2024-11-05 12:28:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 278K
描述
Synchronous MOSFET for Notebook Processor Power

IRFH7932TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-N3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.14
雪崩能效等级(Eas):14 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):25 A最大漏极电流 (ID):24 A
最大漏源导通电阻:0.0033 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-N3JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.4 W最大脉冲漏极电流 (IDM):192 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFH7932TRPBF 数据手册

 浏览型号IRFH7932TRPBF的Datasheet PDF文件第2页浏览型号IRFH7932TRPBF的Datasheet PDF文件第3页浏览型号IRFH7932TRPBF的Datasheet PDF文件第4页浏览型号IRFH7932TRPBF的Datasheet PDF文件第5页浏览型号IRFH7932TRPBF的Datasheet PDF文件第6页浏览型号IRFH7932TRPBF的Datasheet PDF文件第7页 
PD - 96140A  
IRFH7932PbF  
HEXFET® Power MOSFET  
Applications  
l
Synchronous MOSFET for Notebook  
Processor Power  
VDSS  
30V  
RDS(on) max  
Qg  
l
Synchronous Rectifer MOSFET for Isolated  
DC-DC Converters in Networking Systems  
3.3m @VGS = 10V  
34nC  
Benefits  
S
S
l
l
l
Very low RDS(ON) at 4.5V VGS  
Low Gate Charge  
Fully Characterized Avalanche Voltage and  
Current  
D
D
D
D
S
G
l
l
l
l
l
100% Tested for RG  
Lead-Free (Qualified up to 260°C Reflow)  
RoHS compliant (Halogen Free)  
Low Thermal Resistance  
PQFN  
Large Source Lead for more reliable Soldering  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
VDS  
Drain-to-Source Voltage  
V
V
Gate-to-Source Voltage  
± 20  
24  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
20  
A
104  
192  
3.1  
2
DM  
Power Dissipation  
P
P
@TA = 25°C  
@TA = 70°C  
D
D
W
W/°C  
°C  
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.03  
-55 to + 150  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
2.2  
Units  
Junction-to-Case  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient  
–––  
40  
Notes  through are on page 9  
www.irf.com  
1
06/18/08  

IRFH7932TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFH7932TR2PBF INFINEON

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