Datasheet > IRFH8318PBF

IRFH8318PBF

更新时间： 2024-11-05 12:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	256K
描述
HEXFETPower MOSFET

阅读下载

中文翻译

获取价格

数据手册

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IRFH8318PBF 数据手册

PD - 97649C

IRFH8318PbF

HEXFET^®Power MOSFET

V_DS

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

(@V_GS= 4.5V)

3.1

4.6

Q_{g typ}

PQFN 5X6 mm

I_D

(@T_c(Bottom)= 25°C)

Applications

• Synchronous MOSFET for high frequency buck converters

FeaturesandBenefits

Features

Benefits

Low Thermal Resistance to PCB (< 1.7°C/W)

Low Profile (<1.2mm)

Enable better thermal dissipation

results in Increased Power Density

⇒

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

Multi-Vendor Compatibility

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

IRFH8318TRPBF

IRFH8318TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

120

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

400

3.6

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.029

-55 to + 150

W/°C

°C

STG

Notes through are on page 9

www.irf.com

03/30/12

12 3 4 5 6 7...9

中文翻译

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