Datasheet > IRFH8337PBF

IRFH8337PBF

更新时间： 2024-11-24 20:02:39

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲光电二极管晶体管
页数	文件大小	规格书
9页	218K
描述
Power Field-Effect Transistor, 12A I(D), 30V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

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中文翻译

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数据手册

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IRFH8337PBF 数据手册

PD - 97646A

IRFH8337PbF

HEXFET^®Power MOSFET

V_DS

V_{GS max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

12.8

(@V_GS= 4.5V)

19.9

4.7

Q_{g typ.}

PQFN 5X6 mm

I_D

16.2

(@T_c(Bottom)= 25°C)

Applications

• Control MOSFET for high frequency buck converters

FeaturesandBenefits

Features

Benefits

Low Thermal Resistance to PCB (< 4.7°C/W)

Low Profile (<1.2mm)

Enable better thermal dissipation

results in Increased Power Density

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

⇒

Multi-Vendor Compatibility

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL3, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

IRFH8337TRPBF

IRFH8337TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

9.7

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

Continuous Drain Current, V_GS@ 10V (Source Bonding

Technology Limited)

Pulsed Drain Current

16.2

@ T_C= 25°C

3.2

Power Dissipation

@T_A= 25°C

@T_C(Bottom)= 25°C

0.026

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 9

www.irf.com

04/22/11

12 3 4 5 6 7...9

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