Datasheet > IRFHM3911

IRFHM3911

更新时间： 2024-11-19 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	578K
描述
The IR MOSFET? family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.?

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IRFHM3911 数据手册

IRFHM3911TRPbF

HEXFET^®Power MOSFET

V_DSS

100

115

17

R_DS(on)max

(@V_GS= 10V)

m

Qg _(typical)

I_D

11

(@T_{C (Bottom)}= 25°C)

PQFN 3.3X3.3 mm

Applications

 POE+ Power Sourcing Equipment Switch

Features

Benefits

Large Safe Operating Area (SOA)

Low Thermal Resistance to PCB

Low Profile (<1.05mm)

Increased Ruggedness

Enable better thermal dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Industry-Standard Pinout

results in

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial Qualification



Environmentally Friendlier

Increased Reliability

Standard Pack

Base part number

Package Type

Orderable Part Number

Form

Quantity

4000

IRFHM3911PbF

PQFN 3.3mm x 3.3mm

Tape and Reel

IRFHM3911TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

3.2

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

Continuous Drain Current, V_GS@ 10V

11

6.6

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

Pulsed Drain Current 

I_D@ T_C= 25°C

20

I_DM

2.8

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation 

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.023

W/°C

T_J

-55 to + 150

°C

T_STG

Notes  through  are on page 9

2016-2-23

12 3 4 5 6 7...10

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