Datasheet > IRFHM792TRPBF

IRFHM792TRPBF

更新时间： 2024-11-18 12:30:27

品牌	Logo	应用领域
英飞凌 - INFINEON		电池监控
页数	文件大小	规格书
9页	269K
描述
DC-DC Primary Switchl 48V Battery Monitoring

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中文翻译

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数据手册

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IRFHM792TRPBF 数据手册

PD - 96368A

IRFHM792TRPbF

IRFHM792TR2PbF

HEXFET^®Power MOSFET

V_DS

100

TOP VIEW

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

Q_{g typ}

195

4.2

I_D

3.4

(@T_c(Bottom)= 25°C)

PQFN Dual 3.3X3.3 mm

Applications

• DC-DC Primary Switch

• 48V Battery Monitoring

FeaturesandBenefits

Features

Low RDSon (<195mΩ)

Low Thermal Resistance to PCB (< 12°C/W)

Low Profile (<1.2mm)

Benefits

Lower Conduction Losses

Enable better thermal dissipation

results in Increased Power Density

⇒

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

Multi-Vendor Compatibility

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFHM792TRPBF

IRFHM792TR2PBF

PQFN Dual 3.3mm x 3.3mm

400

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

100

± 20

2.3

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

1.8

4.8

3.1

3.4

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Wirebond Limited)

Pulsed Drain Current

2.3

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

10.4

0.018

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 9

www.irf.com

05/10/11

12 3 4 5 6 7...9

中文翻译

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