Datasheet > IRFHM8326PBF_15

IRFHM8326PBF_15

更新时间： 2024-11-19 01:21:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	663K
描述
Compatible with Existing Surface Mount Techniques

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中文翻译

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数据手册

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IRFHM8326PBF_15 数据手册

IRFHM8326PbF

HEXFET^®Power MOSFET

V_DSS

V_GSmax

±20

R_DS(on)max

(@ V_GS= 10V)

4.7

m

(@ V_GS= 4.5V)

6.7

Qg _(typical)

20

I_D

70

(@T_{C (Bottom)}= 25°C)

PQFN 3.3X3.3 mm

Applications

Charge and Discharge Switch for Notebook PC Battery Application

System/Load Switch

Synchronous MOSFET for Buck Converters

Features

Benefits

Low Thermal Resistance to PCB (<3.4°C/W)

Low Profile (<1.05 mm)

Enable better thermal dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Industry-Standard Pinout

results in

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification



Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tape and Reel

Quantity

4000

IRFHM8326PbF

PQFN 3.3 mm x 3.3 mm

IRFHM8326TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

70

44

25

Continuous Drain Current, V_GS@ 10V (Source Bonding

Technology Limited)

I_DM

Pulsed Drain Current 

Power Dissipation 

278

2.8

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation 

Linear Derating Factor 

Operating Junction and

Storage Temperature Range

0.023

W/°C

T_J

-55 to + 150

°C

T_STG

Notes  through  are on page 9

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June 30, 2014

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