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IRFHM8326TRPBF PDF预览

IRFHM8326TRPBF

更新时间: 2024-11-21 15:43:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 584K
描述
Power Field-Effect Transistor, 19A I(D), 30V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8

IRFHM8326TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, S-PDSO-F5Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.12雪崩能效等级(Eas):58 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):70 A
最大漏极电流 (ID):19 A最大漏源导通电阻:0.0067 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-PDSO-F5
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):37 W最大脉冲漏极电流 (IDM):278 A
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFHM8326TRPBF 数据手册

 浏览型号IRFHM8326TRPBF的Datasheet PDF文件第2页浏览型号IRFHM8326TRPBF的Datasheet PDF文件第3页浏览型号IRFHM8326TRPBF的Datasheet PDF文件第4页浏览型号IRFHM8326TRPBF的Datasheet PDF文件第5页浏览型号IRFHM8326TRPBF的Datasheet PDF文件第6页浏览型号IRFHM8326TRPBF的Datasheet PDF文件第7页 
IRFHM8326PbF  
HEXFET® Power MOSFET  
VDSS  
30  
V
V
VGS max  
±20  
RDS(on) max  
(@ VGS = 10V)  
4.7  
G
m  
S
S
S
(@ VGS = 4.5V)  
6.7  
D
Qg (typical)  
20  
nC  
A
D
D
D
D
ID  
70  
(@TC (Bottom) = 25°C)  
Applications  
Charge and Discharge Switch for Notebook PC Battery Application  
System/Load Switch  
Synchronous MOSFET for Buck Converters  
Features  
Benefits  
Low Thermal Resistance to PCB (<3.4°C/W)  
Low Profile (<1.05 mm)  
Enable better thermal dissipation  
Increased Power Density  
Multi-Vendor Compatibility  
Easier Manufacturing  
Industry-Standard Pinout  
results in  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Consumer Qualification  
  
Environmentally Friendlier  
Increased Reliability  
Standard Pack  
Base part number  
Package Type  
Orderable Part Number  
Form  
Quantity  
4000  
IRFHM8326PbF  
PQFN 3.3 mm x 3.3 mm  
Tape and Reel  
IRFHM8326TRPbF  
Absolute Maximum Ratings  
Parameter  
Gate-to-Source Voltage  
Max.  
± 20  
19  
Units  
VGS  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
ID @ TC(Bottom) = 25°C  
ID @ TC(Bottom) = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
15  
70  
44  
25  
A
Continuous Drain Current, VGS @ 10V (Source Bonding  
Technology Limited)  
IDM  
Pulsed Drain Current   
Power Dissipation   
278  
2.8  
PD @TA = 25°C  
PD @TC(Bottom) = 25°C  
W
Power Dissipation   
37  
Linear Derating Factor   
Operating Junction and  
Storage Temperature Range  
0.023  
W/°C  
TJ  
-55 to + 150  
°C  
TSTG  
Notes through are on page 9  
1
2016-2-23  

IRFHM8326TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
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