Datasheet > IRFHM8363TR2PBF

IRFHM8363TR2PBF

更新时间： 2024-11-18 12:08:39

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器
页数	文件大小	规格书
9页	304K
描述
Power Stage for high frequency buck converters

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中文翻译

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数据手册

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IRFHM8363TR2PBF 数据手册

IRFHM8363PbF

HEXFET^®Power MOSFET

V_DS

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

14.9

Ω

(@V_GS= 4.5V)

20.4

6.7

Q_{g typ}

PQFN Dual 3.3X3.3 mm

I_D

(@T_c(Bottom)= 25°C)

Applications

• Power Stage for high frequency buck converters

• Battery Protection charge and discharge switches

FeaturesandBenefits

Features

Benefits

Low Thermal Resistance to PCB (< 6.7°C/W)

Low Profile (<1.0mm)

Enable better thermal dissipation

results in Increased Power Density

⇒

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

Multi-Vendor Compatibility

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFHM8363TRPBF

IRFHM8363TR2PBF

PQFN Dual 3.3mm x 3.3mm

400

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

8.6

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

116

2.7

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

Linear Derating Factor

Operating Junction and

0.02

W/°C

°C

-55 to + 150

Storage Temperature Range

STG

Notes through are on page 9

May 13, 2013

12 3 4 5 6 7...9

中文翻译

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