品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | / | |
页数 | 文件大小 | 规格书 |
10页 | 255K | |
描述 | ||
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | 2 X 2 MM, HALOGEN FREE AND ROHS COMPLAINT, PLASTIC, QFN-6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 1.71 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.037 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | S-PDSO-N6 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 52 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRFHS9301PBF | INFINEON | HEXFET Power MOSFET |
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IRFHS9301TR2PBF | INFINEON | HEXFET Power MOSFET |
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IRFHS9301TRPBF | INFINEON | HEXFET Power MOSFET |
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IRFHS9351 | INFINEON | Small PowIR MOSFETs |
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IRFHS9351PBF | INFINEON | HEXFET Power MOSFET |
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IRFHS9351TR2PBF | INFINEON | Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, P-Channel, Silicon, Metal |
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