IRFHM9331PbF
HEXFET® Power MOSFET
VDS
-30
14.6
32
V
S
S
G
S
5 D
6 D
7 D
8 D
4
3
2
1
D
RDS(on) max
(@VGS = -10V)
S
m
Ω
D
G
D
S
Qg (typical)
nC
A
D
S
ID
-11
3mm x 3mm PQFN
(@TA = 25°C)
Applications
l System/load switch
Features and Benefits
Features
Benefits
Low Thermal Resistance to PCB (<6.0°C/W)
Enable better thermal dissipation
Compatible with Existing Surface Mount Techniques
results in Easier Manufacturing
⇒
Environmentally Friendlier
Increased Reliability
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Standard Pack
Form
Orderable part number
Package Type
Note
Quantity
IRFHM9331TRPbF
IRFHM9331TR2PbF
PQFN 3mm x 3mm
PQFN 3mm x 3mm
Tape and Reel
Tape and Reel
4000
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
-30
± 25
-11
-9
Units
VDS
V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-24
-24
-90
2.8
1.8
A
Power Dissipation
PD @TA = 25°C
PD @ TA = 70°C
W
W/°C
°C
Power Dissipation
Linear Derating Factor
0.02
-55 to + 150
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through are on page 2
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December 16, 2013