Datasheet > IRFHS9301TR2PBF

IRFHS9301TR2PBF

更新时间： 2024-01-24 14:46:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	322K
描述
HEXFET Power MOSFET

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数据手册

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IRFHS9301TR2PBF 数据手册

PD - 97581A

IRFHS9301PbF

HEXFET^®Power MOSFET

V_DS

TOP VIEW

-30

V_{GS max}

±20

R_{DS(on) max}

(@V_GS= -10V)

mΩ

Q_{g (typical)}

I_D

G 3

-8.5

2mm x 2mm PQFN

(@T_C= 25°C)

Applications

l Charge and Discharge Switch for Battery Application

l System/load switch

Features and Benefits

Features

Low R_DSon(≤ 37mΩ)

Low Thermal Resistance to PCB (≤ 13°C/W)

Low Profile (≤ 1.0 mm)

Compatible with Existing Surface Mount Techniques

Benefits

Lower Conduction Losses

Enable better thermal dissipation

results inIncreased Power Density

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFHS9301TRPBF

IRFHS9301TR2PBF

PQFN 2mm x 2mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

-30

Units

V_DS

V_GS

± 20

-6.0

-4.8

-13

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ -10V

-10

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

-8.5

-52

2.1

1.3

Power Dissipation

P_D@T_A= 25°C

P_D@ T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

T_J

T_STG

Storage Temperature Range

Notes through ꢀ are on page 2

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