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IRFHM9331PBF_15 PDF预览

IRFHM9331PBF_15

更新时间: 2022-02-26 11:26:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 236K
描述
Compatible with Existing Surface Mount Techniques

IRFHM9331PBF_15 数据手册

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IRFHM9331PbF  
HEXFET® Power MOSFET  
VDS  
-30  
14.6  
32  
V
S
S
G
S
5 D  
6 D  
7 D  
8 D  
4
3
2
1
D
RDS(on) max  
(@VGS = -10V)  
S
m
Ω
D
G
D
S
Qg (typical)  
nC  
A
D
S
ID  
-11  
3mm x 3mm PQFN  
(@TA = 25°C)  
Applications  
l System/load switch  
Features and Benefits  
Features  
Benefits  
Low Thermal Resistance to PCB (<6.0°C/W)  
Enable better thermal dissipation  
Compatible with Existing Surface Mount Techniques  
results in Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Consumer Qualification  
Standard Pack  
Form  
Orderable part number  
Package Type  
Note  
Quantity  
IRFHM9331TRPbF  
IRFHM9331TR2PbF  
PQFN 3mm x 3mm  
PQFN 3mm x 3mm  
Tape and Reel  
Tape and Reel  
4000  
400  
EOL notice # 259  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Max.  
-30  
± 25  
-11  
-9  
Units  
VDS  
V
VGS  
ID @ TA = 25°C  
ID @ TA = 70°C  
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
Pulsed Drain Current  
-24  
-24  
-90  
2.8  
1.8  
A
Power Dissipation  
PD @TA = 25°C  
PD @ TA = 70°C  
W
W/°C  
°C  
Power Dissipation  
Linear Derating Factor  
0.02  
-55 to + 150  
TJ  
Operating Junction and  
Storage Temperature Range  
TSTG  
Notes  through ‡ are on page 2  
www.irf.com © 2013 International Rectifier  
1
Submit Datasheet Feedback  
December 16, 2013  

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