Datasheet > IRFHM9331TR2PBF

IRFHM9331TR2PBF

更新时间： 2024-09-14 19:58:23

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	241K
描述
Power Field-Effect Transistor, 11A I(D), 30V, 0.0146ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

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数据手册
替代型号

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IRFHM9331TR2PBF 数据手册

IRFHM9331PbF

HEXFET^®Power MOSFET

V_DS

-30

14.6

5 D

6 D

7 D

8 D

R_{DS(on) max}

(@V_GS= -10V)

Q_{g (typical)}

I_D

-11

3mm x 3mm PQFN

(@T_A= 25°C)

Applications

l System/load switch

Features and Benefits

Features

Benefits

Low Thermal Resistance to PCB (<6.0°C/W)

Enable better thermal dissipation

Compatible with Existing Surface Mount Techniques

results in Easier Manufacturing

⇒

Environmentally Friendlier

Increased Reliability

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Standard Pack

Form

Orderable part number

Package Type

Note

Quantity

IRFHM9331TRPbF

IRFHM9331TR2PbF

PQFN 3mm x 3mm

Tape and Reel

4000

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

-30

± 25

-11

-9

Units

V_DS

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-24

-90

2.8

1.8

Power Dissipation

P_D@T_A= 25°C

P_D@ T_A= 70°C

W/°C

°C

Power Dissipation

Linear Derating Factor

0.02

-55 to + 150

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through are on page 2

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December 16, 2013

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IRFHM9331TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFHM9331TRPBF	INFINEON	类似代替	Low Thermal Resistance to PCB (<6.0Â°C/W)

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