Datasheet > IRFHM8342PBF_15

IRFHM8342PBF_15

更新时间： 2024-11-19 01:21:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	634K
描述
Compatible with Existing Surface Mount Techniques

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数据手册

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IRFHM8342PBF_15 数据手册

IRFHM8342TRPbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@ V_GS= 10V)

16

m

(@ V_GS= 4.5V)

Qg _(typical)

5.0

I_D

20

(@T_{C (Bottom)}= 25°C)

PQFN 3.3 x 3.3 mm

Applications

Control MOSFET for synchronous buck converter

Load Switch

Features

Benefits

Low Charge (typical 5.2 nC)

Low Thermal Resistance to PCB (<6.2°C/W)

Low Profile (<0.9 mm)

Low Switching Losses

Enable better Thermal Dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

results in

Industry-Standard Pinout



Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFHM8342PbF

PQFN 3.3mm x 3.3mm

Tape and Reel

4000

IRFHM8342TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

Continuous Drain Current, V_GS@ 10V

28

18

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

Pulsed Drain Current 

I_D@ T_C= 25°C

20

I_DM

112

2.6

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation 

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.020

W/°C

°C

T_J

-55 to + 150

T_STG

Notes  through  are on page 10

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July 1, 2014

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