Datasheet > IRFHM8330PBF

IRFHM8330PBF

更新时间： 2024-11-19 01:21:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	675K
描述
Compatible with Existing Surface Mount Techniques

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中文翻译

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数据手册

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IRFHM8330PBF 数据手册

IRFHM8330PbF

HEXFET^®Power MOSFET

V_DSS

V_GSmax

±20

R_DS(on)max

(@ V_GS= 10V)

6.6

m

(@ V_GS= 4.5V)

9.9

Qg _(typical)

9.3

I_D

25

(@T_{C (Bottom)}= 25°C)

PQFN 3.3X3.3 mm

Applications

Charge and Discharge Switch for Notebook PC Battery Application

System/Load Switch

Control MOSFET for synchronous buck converter

Features

Benefits

Low Thermal Resistance to PCB (<3.8°C/W)

Low Profile (<1.2mm)

Enable better Thermal Dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Industry-Standard Pinout

results in

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Consumer Qualification



Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFHM8330PbF

PQFN 3.3 mm x 3.3 mm

Tape and Reel

4000

IRFHM8330TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

55

35

25

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

I_DM

Pulsed Drain Current

Power Dissipation 

Power Dissipation

210

2.7

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.021

W/°C

°C

T_J

-55 to + 150

T_STG

Notes  through  are on page 10

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June 30, 2014

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