Datasheet > IRFHM8337PBF

IRFHM8337PBF

更新时间： 2024-11-19 01:21:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	648K
描述
Compatible with Existing Surface Mount Techniques

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中文翻译

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数据手册

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IRFHM8337PBF 数据手册

IRFHM8337TRPbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@ V_GS= 10V)

12.4

m

(@ V_GS= 4.5V)

17.9

5.4

Qg _(typical)

I_D

PQFN 3.3 x 3.3 mm

18

(@T_C= 25°C)

Applications

System/load switch,

Charge or discharge switch for battery protection

Features

Benefits

Low Thermal Resistance to PCB (< 5.0°C/W)

Low Profile (<1.05 mm)

Enable better Thermal Dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

results in

Industry-Standard Pinout



Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1,Consumer Qualification

Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFHM8337PbF

PQFN 3.3mm x 3.3mm

Tape and Reel

4000

IRFHM8337TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

9.4

94

35

22

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

Power Dissipation 

18

P_D@T_A= 25°C

2.8

P_D@T_C(Bottom)= 25°C

Power Dissipation 

Linear Derating Factor 

Operating Junction and

Storage Temperature Range

0.02

W/°C

°C

T_J

-55 to + 150

T_STG

Notes  through  are on page 10

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June 5, 2014

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