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IRFHM8334PBF_15 PDF预览

IRFHM8334PBF_15

更新时间: 2024-11-10 01:21:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 252K
描述
Compatible with Existing Surface Mount Techniques

IRFHM8334PBF_15 数据手册

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IRFHM8334TRPbF  
HEXFET® Power MOSFET  
VDS  
30  
V
V
VGS max  
± 20  
RDS(on) max  
(@VGS = 10V)  
(@VGS = 4.5V)  
9.0  
m
13.5  
7.1  
Qg typ.  
nC  
A
ID  
PQFN 3.3 X 3.3 mm  
25  
(@Tc(Bottom) = 25°C)  
Applications  
Control MOSFET for high frequency buck converters  
Features  
Benefits  
Low Thermal Resistance to PCB (< 4.5°C/W)  
Low Profile (<1.2mm)  
Enable better thermal dissipation  
Increased Power Density  
Industry-Standard Pinout  
results in Multi-Vendor Compatibility  
Compatible with Existing Surface Mount Techniques  
Easier Manufacturing  
RoHS Compliant, Halogen-Free  
MSL1, Consumer Qualification  
Environmentally Friendlier  
Increased Reliability  
Base Part Number  
Package Type  
Standard Pack  
Orderable Part Number  
IRFHM8334TRPBF  
Form  
Tape and Reel  
Quantity  
IRFHM8334PBF  
PQFN 3.3mm x 3.3mm  
4000  
Absolute Maximum Ratings  
Parameter  
Max.  
± 20  
13  
Units  
V
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
I
I
I
@ TA = 25°C  
D
D
D
43  
@ TC(Bottom) = 25°C  
@ TC(Bottom) = 100°C  
27  
A
Continuous Drain Current, VGS @ 10V  
(Source Bonding Technology Limited)  
Pulsed Drain Current  
25  
I
I
@ TC = 25°C  
D
176  
2.7  
28  
DM  
P
P
@TA = 25°C  
Power Dissipation  
Power Dissipation  
D
D
W
@TC(Bottom) = 25°C  
Linear Derating Factor  
Operating Junction and  
0.021  
W/°C  
°C  
T
T
-55 to + 150  
J
Storage Temperature Range  
STG  
Notes  through † are on page 9  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
June 5, 2014  

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