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IRFHM8334TRPBF PDF预览

IRFHM8334TRPBF

更新时间: 2024-11-21 21:11:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 550K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

IRFHM8334TRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, S-PDSO-F5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.9
雪崩能效等级(Eas):35 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):25 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-F5湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):28 W
最大脉冲漏极电流 (IDM):176 A子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFHM8334TRPBF 数据手册

 浏览型号IRFHM8334TRPBF的Datasheet PDF文件第2页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第3页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第4页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第5页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第6页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第7页 
IRFHM8334TRPbF  
HEXFET® Power MOSFET  
VDSS  
30  
V
V
VGS max  
±20  
RDS(on) max  
(@ VGS = 10V)  
9.0  
G
m  
S
S
S
(@ VGS = 4.5V)  
13.5  
7.1  
D
Qg (typical)  
nC  
A
D
D
D
D
ID  
25  
(@TC (Bottom) = 25°C)  
Applications  
Control MOSFET for high frequency buck converter  
Features  
Benefits  
Low Thermal Resistance to PCB (<4.5°C/W)  
Low Profile (<1.2mm)  
Enable better Thermal Dissipation  
Increased Power Density  
Multi-Vendor Compatibility  
Easier Manufacturing  
Industry-Standard Pinout  
results in  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
MSL1, Consumer Qualification  
  
Environmentally Friendlier  
Increased Reliability  
Standard Pack  
Base part number  
Package Type  
Orderable Part Number  
Form  
Quantity  
4000  
IRFHM8334PbF  
PQFN 3.3 mm x 3.3 mm  
Tape and Reel  
IRFHM8334TRPbF  
Absolute Maximum Ratings  
Parameter  
Gate-to-Source Voltage  
Max.  
± 20  
Units  
VGS  
V
ID @ TA = 25°C  
ID @ TC(Bottom) = 25°C  
ID @ TC(Bottom) = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
13  
43  
27  
25  
A
Continuous Drain Current, VGS @ 10V  
(Source Bonding Technology Limited)  
IDM  
Pulsed Drain Current  
Power Dissipation   
Power Dissipation  
176  
2.7  
PD @TA = 25°C  
PD @TC(Bottom) = 25°C  
W
28  
Linear Derating Factor  
Operating Junction and  
Storage Temperature Range  
0.021  
W/°C  
TJ  
-55 to + 150  
°C  
TSTG  
Notes through are on page 10  
1
2016-2-23  

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