5秒后页面跳转
IRFHM8334TRPBF PDF预览

IRFHM8334TRPBF

更新时间: 2024-09-08 21:11:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 550K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

IRFHM8334TRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, S-PDSO-F5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.9
雪崩能效等级(Eas):35 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):25 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-F5湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):28 W
最大脉冲漏极电流 (IDM):176 A子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFHM8334TRPBF 数据手册

 浏览型号IRFHM8334TRPBF的Datasheet PDF文件第2页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第3页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第4页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第5页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第6页浏览型号IRFHM8334TRPBF的Datasheet PDF文件第7页 
IRFHM8334TRPbF  
HEXFET® Power MOSFET  
VDSS  
30  
V
V
VGS max  
±20  
RDS(on) max  
(@ VGS = 10V)  
9.0  
G
m  
S
S
S
(@ VGS = 4.5V)  
13.5  
7.1  
D
Qg (typical)  
nC  
A
D
D
D
D
ID  
25  
(@TC (Bottom) = 25°C)  
Applications  
Control MOSFET for high frequency buck converter  
Features  
Benefits  
Low Thermal Resistance to PCB (<4.5°C/W)  
Low Profile (<1.2mm)  
Enable better Thermal Dissipation  
Increased Power Density  
Multi-Vendor Compatibility  
Easier Manufacturing  
Industry-Standard Pinout  
results in  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant, Halogen-Free  
MSL1, Consumer Qualification  
  
Environmentally Friendlier  
Increased Reliability  
Standard Pack  
Base part number  
Package Type  
Orderable Part Number  
Form  
Quantity  
4000  
IRFHM8334PbF  
PQFN 3.3 mm x 3.3 mm  
Tape and Reel  
IRFHM8334TRPbF  
Absolute Maximum Ratings  
Parameter  
Gate-to-Source Voltage  
Max.  
± 20  
Units  
VGS  
V
ID @ TA = 25°C  
ID @ TC(Bottom) = 25°C  
ID @ TC(Bottom) = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
13  
43  
27  
25  
A
Continuous Drain Current, VGS @ 10V  
(Source Bonding Technology Limited)  
IDM  
Pulsed Drain Current  
Power Dissipation   
Power Dissipation  
176  
2.7  
PD @TA = 25°C  
PD @TC(Bottom) = 25°C  
W
28  
Linear Derating Factor  
Operating Junction and  
Storage Temperature Range  
0.021  
W/°C  
TJ  
-55 to + 150  
°C  
TSTG  
Notes through are on page 10  
1
2016-2-23  

与IRFHM8334TRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFHM8337PBF INFINEON

获取价格

Compatible with Existing Surface Mount Techniques
IRFHM8337PBF_15 INFINEON

获取价格

Compatible with Existing Surface Mount Techniques
IRFHM8337TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 12A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Me
IRFHM8342PBF INFINEON

获取价格

Control MOSFET for synchronous buck converter
IRFHM8342PBF_15 INFINEON

获取价格

Compatible with Existing Surface Mount Techniques
IRFHM8342TRPBF INFINEON

获取价格

Control MOSFET for synchronous buck converter
IRFHM8363 INFINEON

获取价格

Small PowIR MOSFETs
IRFHM8363PBF INFINEON

获取价格

Power Stage for high frequency buck converters
IRFHM8363TR2PBF INFINEON

获取价格

Power Stage for high frequency buck converters
IRFHM8363TRPBF INFINEON

获取价格

Power Stage for high frequency buck converters