Datasheet > IRFHM8334PBF

IRFHM8334PBF

更新时间： 2024-11-19 01:21:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	252K
描述
Compatible with Existing Surface Mount Techniques

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中文翻译

获取价格

数据手册

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IRFHM8334PBF 数据手册

IRFHM8334TRPbF

HEXFET^®Power MOSFET

V_DS

V_{GS max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

(@V_GS= 4.5V)

9.0

13.5

7.1

Q_{g typ.}

I_D

PQFN 3.3 X 3.3 mm

(@T_c(Bottom)= 25°C)

Applications

• Control MOSFET for high frequency buck converters

Features

Benefits

Low Thermal Resistance to PCB (< 4.5°C/W)

Low Profile (<1.2mm)

Enable better thermal dissipation

Increased Power Density

Industry-Standard Pinout

results in Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

⇒

Easier Manufacturing

RoHS Compliant, Halogen-Free

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Base Part Number

Package Type

Standard Pack

Orderable Part Number

IRFHM8334TRPBF

Form

Tape and Reel

Quantity

IRFHM8334PBF

PQFN 3.3mm x 3.3mm

4000

Absolute Maximum Ratings

Parameter

Max.

± 20

Units

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

Pulsed Drain Current

@ T_C= 25°C

176

2.7

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

Linear Derating Factor

Operating Junction and

0.021

W/°C

°C

-55 to + 150

Storage Temperature Range

STG

Notes through are on page 9

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June 5, 2014

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