Datasheet > IRFHM8235PBF_15

IRFHM8235PBF_15

更新时间： 2024-11-19 01:21:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	753K
描述
Compatible with Existing Surface Mount Techniques

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数据手册

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IRFHM8235PBF_15 数据手册

IRFHM8235PbF

HEXFET^®Power MOSFET

V_DSS

V_GSmax

±20

R_DS(on)max

(@ V_GS= 10V)

7.7

m

(@ V_GS= 4.5V)

13.4

Qg _(typical)

7.7

I_D

25

(@T_{C (Bottom)}= 25°C)

PQFN 3.3X3.3 mm

Applications

Control MOSFET for synchronous buck converter

Features

Benefits

Low Thermal Resistance to PCB (<4.1°C/W)

Low Profile (<1.05mm)

Enable better Thermal Dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Industry-Standard Pin out

results in

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Consumer Qualification



Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFHM8235PbF

PQFN 3.3 mm x 3.3 mm

Tape and Reel

4000

IRFHM8235TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

50

32

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

25

I_DM

Pulsed Drain Current 

Power Dissipation 

240

3.0

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation 

Linear Derating Factor 

Operating Junction and

Storage Temperature Range

0.024

W/°C

T_J

-55 to + 150

°C

T_STG

Notes  through  are on page 10

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June 30, 2014

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