Datasheet > IRFHM830DPBF_15

IRFHM830DPBF_15

更新时间： 2024-11-06 01:21:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	250K
描述
Compatible with Existing Surface Mount Techniques

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中文翻译

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数据手册

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IRFHM830DPBF_15 数据手册

IRFHM830DPbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

4.3

R_{G (typical)}

1.1

I_D

3.3mm x 3.3mm PQFN

(@T_c(Bottom)= 25°C)

Applications

• Synchronous MOSFET for Buck Converters

FeaturesandBenefits

Features

Benefits

Low R_DSon(≤ 4.3mΩ)

Lower Conduction Losses

Lower switching losses

Increased Power Density

Increased Reliability

Increased Power Density

Schottky intrinsic diode with low forward voltage

Low Thermal Resistance to PCB (<3.4°C/W)

100% Rg tested

Low Profile (< 1.0mm)

results in

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

Multi-Vendor Compatibility

Easier Manufacturing

⇒

Environmentally Friendlier

Increased Reliability

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Standard Pack

Orderable part number

Package Type

Note

Form

Quantity

IRFHM830DTRPbF

IRFHM830DTR2PBF

PQFN 3.3mm x 3.3mm

Tape and Reel

4000

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

V_GS

±20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

160

2.8

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

W/°C

°C

Power Dissipation

Linear Derating Factor

0.022

-55 to + 150

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through are on page 9

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June 6, 2014

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