Datasheet > IRFHM831PBF

IRFHM831PBF

更新时间： 2024-09-08 12:36:47

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器
页数	文件大小	规格书
8页	262K
描述
Control MOSFET for Buck Converters

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中文翻译

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数据手册

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IRFHM831PBF 数据手册

PD -97539A

IRFHM831PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

7.8

Q_{g (typical)}

R_{G (typical)}

7.3

0.5

I_D

PQFN 3.3mm x 3.3mm

(@T_c(Bottom)= 25°C)

Applications

• Control MOSFET for Buck Converters

Features and Benefits

Features

Benefits

Low Charge (typical 7.3nC)

Low Thermal Resistance to PCB (<4.7°C/W)

100% Rg tested

Lower Switching Losses

Enable Better Thermal Dissipation

Increased Reliability

Low Profile (<1.0mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Compatible with Existing Surface Mount Techniques

Environmentally Friendlier

Increased Reliability

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFHM831TRPBF

IRFHM831TR2PBF

PQFN 3.3mm x 3.3mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

V_GS

±20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

2.5

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

T_J

T_STG

Storage Temperature Range

Notes through are on page 8

www.irf.com

9/8/10

12 3 4 5 6 7 8

中文翻译

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