Datasheet > IRFHM4226PBF_15

IRFHM4226PBF_15

更新时间： 2024-11-19 01:16:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	560K
描述
Compatible with Existing Surface Mount Techniques

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数据手册

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IRFHM4226PBF_15 数据手册

FastIRFET™

IRFHM4226TRPbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@ V_GS= 10V)

2.4

m

(@ V_GS= 4.5V)

3.3

Qg _(typical)

I_D

60

(@T_{C (Bottom)}= 25°C)

PQFN 3.3 x 3.3 mm

Applications

Control or Synchronous MOSFET for high frequency buck converters

Features

Benefits

Low R_DSon(<2.4m)

Low Charge (typical 16nC)

Low Thermal Resistance to PCB (<3.2°C/W)

Lower Conduction Losses

Low Switching Losses

Enable better thermal dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Low Profile (<0.9 mm)

results in

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1



Environmentally Friendlier

Increased Reliability

Standard Pack

Base part number

Package Type

Orderable Part Number

Form

Quantity

IRFHM4226TRPbF

PQFN 3.3mm x 3.3mm

Tape and Reel

4000

IRFHM4226TRPbF

Absolute Maximum Ratings

Parameter

Max.

± 20

Units

V_GS

Gate-to-Source Voltage

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

Continuous Drain Current, V_GS@ 10V

105

67

I_D@ T_C(Bottom)= 100°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

Pulsed Drain Current 

60

I_DM

420

2.7

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation 

Linear Derating Factor 

Operating Junction and

Storage Temperature Range

0.021

W/°C

T_J

-55 to + 150

°C

T_STG

Notes  through  are on page 9

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December 9, 2014

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