Datasheet > IRFHM792PBF

IRFHM792PBF

更新时间： 2024-11-19 01:16:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	267K
描述
Compatible with Existing Surface Mount Techniques

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中文翻译

获取价格

数据手册

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IRFHM792PBF 数据手册

IRFHM792PbF

HEXFET^®Power MOSFET

V_DS

100

TOP VIEW

V_{gs max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

Q_{g typ}

195

4.2

I_D

3.4

(@T_c(Bottom)= 25°C)

PQFN Dual 3.3X3.3 mm

Applications

• DC-DC Primary Switch

• 48V Battery Monitoring

FeaturesandBenefits

Features

Low RDSon (<195mΩ)

Low Thermal Resistance to PCB (< 12°C/W)

Low Profile (<1.2mm)

Benefits

Lower Conduction Losses

Enable better thermal dissipation

results in Increased Power Density

⇒

Industry-Standard Pinout

Compatible with Existing Surface Mount Techniques

Multi-Vendor Compatibility

Easier Manufacturing

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Environmentally Friendlier

Increased Reliability

Standard Pack

Orderable part number

Package Type

Note

Form

Quantity

IRFHM792TRPBF

IRFHM792TR2PBF

PQFN Dual 3.3mm x 3.3mm

Tape and Reel

4000

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Max.

100

± 20

2.3

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

1.8

4.8

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@ T_C= 25°C

3.1

Continuous Drain Current, V_GS@ 10V (Wirebond Limited)

Pulsed Drain Current

3.4

Power Dissipation

@T_A= 25°C

2.3

Power Dissipation

@T_C(Bottom)= 25°C

10.4

0.018

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 9

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December 16, 2013

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中文翻译

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