Datasheet > IRFHM7194PBF_15

IRFHM7194PBF_15

更新时间： 2024-11-19 01:16:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	579K
描述
Compatible with Existing Surface Mount Techniques

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数据手册

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IRFHM7194PBF_15 数据手册

FastIRFET™

IRFHM7194TRPbF

HEXFET^®Power MOSFET

V_DSS

100

R_DS(on)max

(@ V_GS= 10V)

16.4

m

Qg _(typical)

Rg _(typical)

2.0



I_D

(@T_{C (Bottom)}= 25°C)

PQFN 3.3 x 3.3 mm

Applications

 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies

 Secondary Side Synchronous Rectifier

Features

Low R_DSon(<16.4m)

Benefits

Lower Conduction Losses

Low Charge (typical 13nC)

Low Thermal Resistance to PCB (<3.4°C/W)

Low Profile (<0.9 mm)

Low Switching Losses

Enable better thermal dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

results in

Industry-Standard Pinout



Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial Qualification

Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFHM7194TRPbF

PQFN 3.3mm x 3.3mm

Tape and Reel

4000

IRFHM7194TRPbF

Absolute Maximum Ratings

Parameter

Max.

Units

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

Continuous Drain Current, V_GS@ 10V

9.3

I_D@ T_C(Bottom)= 100°C Continuous Drain Current, V_GS@ 10V

I_DM

Pulsed Drain Current 

Power Dissipation 

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

2.8

Power Dissipation 

Linear Derating Factor 

Operating Junction and

Storage Temperature Range

0.022

-55 to + 150

W/°C

T_J

°C

T_STG

Notes  through  are on page 8

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March 31, 2015

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