Datasheet > IRFHE4250DPBF

IRFHE4250DPBF

更新时间： 2024-11-25 01:16:59

品牌	Logo	应用领域
英飞凌 - INFINEON		PC
页数	文件大小	规格书
12页	382K
描述
Low thermal resistance path to the PCB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFHE4250DPBF 数据手册

FASTIRFET™

IRFHE4250DPbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@V_GS= 4.5V)

4.10

13

1.35

m

Qg _(typical)

I_D

60

(@T_C= 25°C)

Applications

Control and Synchronous MOSFETs for synchronous buck

converters

DUAL PQFN 6X6 mm

Benefits

Features

Control and synchronous MOSFETs in one package

Low thermal resistance path to the PCB

Low thermal resistance path to the top

Low charge control MOSFET (13nC typical)

Low R_DSONsynchronous MOSFET (<1.35m)

Intrinsic schottky diode with low forward voltage on Q2

RoHS compliant, halogen-free

Increased power density

Lower switching losses

Lower conduction losses

Lower switching losses

Environmentally friendlier

Increased reliability

results in



MSL2, industrial qualification

Base part number

Package Type

Standard Pack

Orderable Part Number

IRFHE4250DTRPbF

Form

Quantity

4000

IRFHE4250DPbF

Dual PQFN 6mm x 6mm

Tape and Reel

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Q1 Max.

Q2 Max.

Units

V_GS

± 16

I_D@ T_C= 25°C

86

69

303

243

I_D@ T_C= 70°C

I_D@ T_C= 25°C

Continuous Drain Current

(Source Bonding Technology Limited)

60

I_DM

Pulsed Drain Current

Power Dissipation

180

156

100

525

156

P_D@T_C= 25°C

P_D@T_C= 70°C

100

Linear Derating Factor

1.3

W/°C

°C

T_J

Operating Junction and

Storage Temperature Range

-55 to + 150

T_STG

Thermal Resistance

Parameter

Q1 Max.

Q2 Max.

Units

Junction-to-Case 

3.7

0.91

2.1

R_JC(Bottom)

R_JC(Top)

R_JA

°C/W

Junction-to-Case 

Junction-to-Ambient 

R_JA(<10s)

Notes  through  are on page 12

www.irf.com

September 26, 2013

12 3 4 5 6 7...12

中文翻译

下载PDF

与IRFHE4250DPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFHE4250DPBF_15	INFINEON	获取价格	Low thermal resistance path to the PCB
IRFHM3911	INFINEON	获取价格	The IR MOSFET? family of power MOSFETs utilizes proven silicon processes offering designer
IRFHM3911PBF	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFHM3911PBF_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFHM4226PBF	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFHM4226PBF_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFHM4226TRPBF	INFINEON	获取价格	Control or Synchronous MOSFET for high frequency buck converters
IRFHM4231PBF	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFHM4231PBF_15	INFINEON	获取价格	Compatible with Existing Surface Mount Techniques
IRFHM4231TRPBF	INFINEON	获取价格	Power Field-Effect Transistor