Datasheet > IRFHE4250DPBF_15

IRFHE4250DPBF_15

更新时间： 2024-11-06 01:16:59

品牌	Logo	应用领域
英飞凌 - INFINEON		PC
页数	文件大小	规格书
12页	382K
描述
Low thermal resistance path to the PCB

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中文翻译

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数据手册

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IRFHE4250DPBF_15 数据手册

FASTIRFET™

IRFHE4250DPbF

HEXFET^®Power MOSFET

V_DSS

R_DS(on)max

(@V_GS= 4.5V)

4.10

13

1.35

m

Qg _(typical)

I_D

60

(@T_C= 25°C)

Applications

Control and Synchronous MOSFETs for synchronous buck

converters

DUAL PQFN 6X6 mm

Benefits

Features

Control and synchronous MOSFETs in one package

Low thermal resistance path to the PCB

Low thermal resistance path to the top

Low charge control MOSFET (13nC typical)

Low R_DSONsynchronous MOSFET (<1.35m)

Intrinsic schottky diode with low forward voltage on Q2

RoHS compliant, halogen-free

Increased power density

Lower switching losses

Lower conduction losses

Lower switching losses

Environmentally friendlier

Increased reliability

results in



MSL2, industrial qualification

Base part number

Package Type

Standard Pack

Orderable Part Number

IRFHE4250DTRPbF

Form

Quantity

4000

IRFHE4250DPbF

Dual PQFN 6mm x 6mm

Tape and Reel

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Q1 Max.

Q2 Max.

Units

V_GS

± 16

I_D@ T_C= 25°C

86

69

303

243

I_D@ T_C= 70°C

I_D@ T_C= 25°C

Continuous Drain Current

(Source Bonding Technology Limited)

60

I_DM

Pulsed Drain Current

Power Dissipation

180

156

100

525

156

P_D@T_C= 25°C

P_D@T_C= 70°C

100

Linear Derating Factor

1.3

W/°C

°C

T_J

Operating Junction and

Storage Temperature Range

-55 to + 150

T_STG

Thermal Resistance

Parameter

Q1 Max.

Q2 Max.

Units

Junction-to-Case 

3.7

0.91

2.1

R_JC(Bottom)

R_JC(Top)

R_JA

°C/W

Junction-to-Case 

Junction-to-Ambient 

R_JA(<10s)

Notes  through  are on page 12

www.irf.com

September 26, 2013

12 3 4 5 6 7...12

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