Datasheet > IRFHM3911PBF

IRFHM3911PBF

更新时间： 2024-11-06 01:16:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	631K
描述
Compatible with Existing Surface Mount Techniques

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中文翻译

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数据手册

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IRFHM3911PBF 数据手册

IRFHM3911TRPbF

HEXFET^®Power MOSFET

V_DSS

100

115

17

R_DS(on)max

m

(@V_GS= 10V)

Qg _(typical)

I_D

11

PQFN 3.3X3.3 mm

(@T_{C (Bottom)}= 25°C)

Applications

 POE+ Power Sourcing Equipment Switch

Features

Benefits

Large Safe Operating Area (SOA)

Low Thermal Resistance to PCB

Low Profile (<1.05mm)

Increased Ruggedness

Enable better thermal dissipation

Increased Power Density

Multi-Vendor Compatibility

Easier Manufacturing

Industry-Standard Pinout

results in

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial Qualification



Environmentally Friendlier

Increased Reliability

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFHM3911PbF

PQFN 3.3mm x 3.3mm

Tape and Reel

4000

IRFHM3911TRPbF

Absolute Maximum Ratings

Parameter

Gate-to-Source Voltage

Max.

± 20

3.2

Units

V_GS

I_D@ T_A= 25°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

Continuous Drain Current, V_GS@ 10V

11

6.6

Continuous Drain Current, V_GS@ 10V

(Source Bonding Technology Limited)

Pulsed Drain Current 

I_D@ T_C= 25°C

20

I_DM

2.8

P_D@T_A= 25°C

P_D@T_C(Bottom)= 25°C

Power Dissipation 

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.023

W/°C

°C

T_J

-55 to + 150

T_STG

Notes  through  are on page 9

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July 1, 2014

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