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IRFH9310PBF PDF预览

IRFH9310PBF

更新时间: 2024-11-25 01:13:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 296K
描述
RoHS Compliant Containing no Lead, no Bromide and no Halogen

IRFH9310PBF 数据手册

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IRFH9310PbF  
HEXFET® Power MOSFET  
VDS  
-30  
4.6  
V
6 mm  
S
RDS(on) max  
(@VGS = 10V)  
Qg (typical)  
S
S
G
m
D
D
D
110  
2.8  
nC  
RG (typical)  
D
ID  
PQFN  
5mm x 6mm  
-21  
A
(@TA = 25°C)  
Applications  
Charge and Discharge Switch for Notebook PC Battery Application  
FeaturesandBenefits  
Resulting Benefits  
Features  
Low RDSon (4.6mΩ)  
Lower Conduction Losses  
results in  
Industry-Standard PQFN Package  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
Multi-Vendor Compatibility  
Environmentally Friendlier  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Quantity  
IRFH9310TRPBF  
PQFN 5mm x 6mm  
Tape and Reel  
4000  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
-30  
V
VGS  
± 20  
ID @ TA = 25°C  
ID @ TA = 70°C  
ID @ TC = 25°C  
ID @ TC = 70°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ -10V  
Continuous Drain Current, VGS @ -10V  
-21  
-17  
-107  
- 86  
-40  
Continuous Drain Current, VGS @ -10V (Silicon Limited)  
Continuous Drain Current, VGS @ -10V (Silicon Limited)  
Continuous Drain Current, VGS @ -10V (Package Limited)  
Pulsed Drain Current  
A
-170  
3.1  
PD @TA = 25°C  
PD @ TA = 70°C  
Power Dissipation  
W
Power Dissipation  
2.0  
Linear Derating Factor  
Operating Junction and  
Storage Temperature Range  
0.025  
-55 to + 150  
W/°C  
°C  
TJ  
TSTG  
Notes  through † are on page 2  
www.irf.com © 2014 International Rectifier  
1
Submit Datasheet Feedback  
August 26, 2014  

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