Datasheet > IRFH9310

IRFH9310

更新时间： 2024-11-06 11:10:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	294K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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数据手册

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IRFH9310 数据手册

IRFH9310PbF

HEXFET^®Power MOSFET

V_DS

-30

4.6

6 mm

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

Ω

110

2.8

R_{G (typical)}

Ω

I_D

PQFN

5mm x 6mm

-21

(@T_A= 25°C)

Applications

• Charge and Discharge Switch for Notebook PC Battery Application

FeaturesandBenefits

Resulting Benefits

Features

Low R_DSon(≤ 4.6mΩ)

Lower Conduction Losses

results in

Industry-Standard PQFN Package

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Multi-Vendor Compatibility

Environmentally Friendlier

⇒

Orderable part number

Package Type

Standard Pack

Note

Form

Quantity

IRFH9310TRPBF

PQFN 5mm x 6mm

Tape and Reel

4000

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

-30

V_GS

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ -10V

-21

-17

-107

- 86

-40

Continuous Drain Current, V_GS@ -10V (Silicon Limited)

Continuous Drain Current, V_GS@ -10V (Package Limited)

Pulsed Drain Current

-170

3.1

P_D@T_A= 25°C

P_D@ T_A= 70°C

Power Dissipation

2.0

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.025

-55 to + 150

W/°C

°C

T_J

T_STG

Notes through are on page 2

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August 26, 2014

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