Datasheet > IRFH8334

IRFH8334

更新时间： 2024-11-21 14:53:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	285K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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数据手册

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IRFH8334 数据手册

IRFH8334PbF

HEXFET^®Power MOSFET

V_DS

V_{GS max}

± 20

R_{DS(on) max}

(@V_GS= 10V)

9.0

Ω

(@V_GS= 4.5V)

13.5

7.1

Q_{g typ.}

PQFN 5X6 mm

I_D

(@T_c(Bottom)= 25°C)

Applications

• Control MOSFET for high frequency buck converters

FeaturesandBenefits

Features

Benefits

Low Thermal Resistance to PCB (< 4.1°C/W)

Low Profile (<1.2mm)

Enable better thermal dissipation

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

Easier Manufacturing

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Consumer Qualification

Environmentally Friendlier

Increased Reliability

Orderable part number Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFH8334TRPBF

IRFH8334TR2PBF

PQFN 5mm x 6mm

400

EOL notice #259

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

@ T_A= 25°C

@ T_A= 70°C

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

Continuous Drain Current, V_GS@ 10V (Source Bonding

Technology Limited)

Pulsed Drain Current

@ T_C= 25°C

100

3.2

Power Dissipation

@T_A= 25°C

@T_C(Bottom)= 25°C

0.026

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 9

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January 13, 2014

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