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IRFH8334TRPBF PDF预览

IRFH8334TRPBF

更新时间: 2024-11-25 01:03:03
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 286K
描述
Control MOSFET for high frequency buck converters

IRFH8334TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.88
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):35 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.009 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
最大脉冲漏极电流 (IDM):100 A子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFH8334TRPBF 数据手册

 浏览型号IRFH8334TRPBF的Datasheet PDF文件第2页浏览型号IRFH8334TRPBF的Datasheet PDF文件第3页浏览型号IRFH8334TRPBF的Datasheet PDF文件第4页浏览型号IRFH8334TRPBF的Datasheet PDF文件第5页浏览型号IRFH8334TRPBF的Datasheet PDF文件第6页浏览型号IRFH8334TRPBF的Datasheet PDF文件第7页 
IRFH8334PbF  
HEXFET® Power MOSFET  
VDS  
30  
V
V
VGS max  
± 20  
RDS(on) max  
(@VGS = 10V)  
9.0  
m
(@VGS = 4.5V)  
13.5  
7.1  
Qg typ.  
nC  
A
PQFN 5X6 mm  
ID  
25  
(@Tc(Bottom) = 25°C)  
Applications  
Control MOSFET for high frequency buck converters  
FeaturesandBenefits  
Features  
Benefits  
Low Thermal Resistance to PCB (< 4.1°C/W)  
Low Profile (<1.2mm)  
Enable better thermal dissipation  
results in Increased Power Density  
Industry-Standard Pinout  
Multi-Vendor Compatibility  
Easier Manufacturing  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Consumer Qualification  
Environmentally Friendlier  
Increased Reliability  
Orderable part number Package Type  
Standard Pack  
Note  
Form  
Tape and Reel  
Tape and Reel  
Quantity  
4000  
IRFH8334TRPBF  
IRFH8334TR2PBF  
PQFN 5mm x 6mm  
PQFN 5mm x 6mm  
400  
EOL notice #259  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
± 20  
14  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
I
I
I
I
@ TA = 25°C  
D
D
D
D
@ TA = 70°C  
12  
44  
@ TC(Bottom) = 25°C  
@ TC(Bottom) = 100°C  
A
28  
Continuous Drain Current, VGS @ 10V (Source Bonding  
Technology Limited)  
Pulsed Drain Current  
25  
I
I
@ TC = 25°C  
D
100  
3.2  
30  
DM  
Power Dissipation  
Power Dissipation  
P
P
@TA = 25°C  
D
D
W
@TC(Bottom) = 25°C  
0.026  
-55 to + 150  
Linear Derating Factor  
Operating Junction and  
W/°C  
°C  
T
T
J
Storage Temperature Range  
STG  
Notes  through ‡ are on page 9  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
January 13, 2014  

IRFH8334TRPBF 替代型号

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IRFH8334TR2PBF INFINEON

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